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Datasheets for N66

Datasheets found :: 921
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
No. Part Name Description Manufacturer
241 2N6609 Power 16A 140V Discrete PNP ON Semiconductor
242 2N661 Germanium PNP Transistor Motorola
243 2N661 Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
244 2N6618 NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 Motorola
245 2N6619 12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application Siemens
246 2N662 Germanium PNP Transistor Motorola
247 2N662 Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
248 2N6620 NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER Siemens
249 2N6621 25 V, 25 mA, NPN silicon RF broadband transistor Siemens
250 2N663 Germanium PNP Transistor Motorola
251 2N6648 Leaded Power Transistor Darlington Central Semiconductor
252 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
253 2N6648 PNP Darlington Transistor Microsemi
254 2N6648 POWER TRANSISTORS(10A,100W) MOSPEC Semiconductor
255 2N6648 15A peak complementary silicon power darlington PNP transistor Motorola
256 2N6648 Trans Darlington PNP 40V 10A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
257 2N6648E3 Darlington Transistors Microsemi
258 2N6649 Leaded Power Transistor Darlington Central Semiconductor
259 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
260 2N6649 PNP Darlington Transistor Microsemi
261 2N6649 POWER TRANSISTORS(10A,100W) MOSPEC Semiconductor
262 2N6649 15A peak complementary silicon power darlington PNP transistor Motorola
263 2N6649 Trans Darlington PNP 60V 10A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
264 2N6649E3 BJT( BiPolar Junction Transistor) Microsemi
265 2N665 PNP germanium power transistor in military and industrial equipment Motorola
266 2N665 Germanium PNP Transistor Motorola
267 2N665 Germanium PNP Power Transistor, TO-3 Package Silicon Transistor Corporation
268 2N6650 Leaded Power Transistor Darlington Central Semiconductor
269 2N6650 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
270 2N6650 PNP Darlington Transistor Microsemi


Datasheets found :: 921
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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