No. |
Part Name |
Description |
Manufacturer |
241 |
2N6609 |
Power 16A 140V Discrete PNP |
ON Semiconductor |
242 |
2N661 |
Germanium PNP Transistor |
Motorola |
243 |
2N661 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
244 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
245 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
246 |
2N662 |
Germanium PNP Transistor |
Motorola |
247 |
2N662 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
248 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
249 |
2N6621 |
25 V, 25 mA, NPN silicon RF broadband transistor |
Siemens |
250 |
2N663 |
Germanium PNP Transistor |
Motorola |
251 |
2N6648 |
Leaded Power Transistor Darlington |
Central Semiconductor |
252 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
253 |
2N6648 |
PNP Darlington Transistor |
Microsemi |
254 |
2N6648 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
255 |
2N6648 |
15A peak complementary silicon power darlington PNP transistor |
Motorola |
256 |
2N6648 |
Trans Darlington PNP 40V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
257 |
2N6648E3 |
Darlington Transistors |
Microsemi |
258 |
2N6649 |
Leaded Power Transistor Darlington |
Central Semiconductor |
259 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
260 |
2N6649 |
PNP Darlington Transistor |
Microsemi |
261 |
2N6649 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
262 |
2N6649 |
15A peak complementary silicon power darlington PNP transistor |
Motorola |
263 |
2N6649 |
Trans Darlington PNP 60V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
264 |
2N6649E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
265 |
2N665 |
PNP germanium power transistor in military and industrial equipment |
Motorola |
266 |
2N665 |
Germanium PNP Transistor |
Motorola |
267 |
2N665 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
268 |
2N6650 |
Leaded Power Transistor Darlington |
Central Semiconductor |
269 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
270 |
2N6650 |
PNP Darlington Transistor |
Microsemi |
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