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Datasheets for NERAL ELECTR

Datasheets found :: 958
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
No. Part Name Description Manufacturer
241 2N6394 12A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
242 2N6395 12A silicon controlled rectifier. Vrsom 125V. General Electric Solid State
243 2N6396 12A silicon controlled rectifier. Vrsom 250V. General Electric Solid State
244 2N6397 12A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
245 2N6398 12A silicon controlled rectifier. Vrsom 650V. General Electric Solid State
246 2N6400 16A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
247 2N6401 16A silicon controlled rectifier. Vrsom 125V. General Electric Solid State
248 2N6402 16A silicon controlled rectifier. Vrsom 250V. General Electric Solid State
249 2N6403 16A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
250 2N6404 16A silicon controlled rectifier. Vrsom 650V. General Electric Solid State
251 2N6420 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
252 2N6421 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
253 2N6422 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
254 2N6423 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
255 2N6467 Silicon P-N-P medium-power transistor. -110V, 40W. General Electric Solid State
256 2N6468 Silicon P-N-P medium-power transistor. -130V, 40W. General Electric Solid State
257 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
258 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
259 2N6474 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. General Electric Solid State
260 2N6475 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. General Electric Solid State
261 2N6476 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. General Electric Solid State
262 2N6477 MEDIUM POWER SILICON NPN TRANSISTORS General Electric Solid State
263 2N6478 MEDIUM POWER SILICON NPN TRANSISTORS General Electric Solid State
264 2N6486 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. General Electric Solid State
265 2N6487 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. General Electric Solid State
266 2N6488 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. General Electric Solid State
267 2N6489 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. General Electric Solid State
268 2N6490 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. General Electric Solid State
269 2N6491 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. General Electric Solid State
270 2N6496 High current, high power, high speed silicon N-P-N planar transistor. General Electric Solid State


Datasheets found :: 958
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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