| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N2907A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 242 |
2N2907A |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 243 |
2N2955 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 244 |
2N2956 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 245 |
2N2957 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 246 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
| 247 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 248 |
2N3053 |
NPN Silicon Switching and amplifier Transistor |
ITT Semiconductors |
| 249 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 250 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 251 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 252 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 253 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 254 |
2N3133S |
PNP silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 255 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 256 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 257 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 258 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 259 |
2N3244S |
PNP silicon annular transistor for medium-current, high-speed switching and driver applications |
Motorola |
| 260 |
2N3245S |
PNP silicon annular transistor for medium-current, high-speed switching and driver applications |
Motorola |
| 261 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 262 |
2N3252S |
NPN silicon annular transistor for high-current saturated switching and core driver applications |
Motorola |
| 263 |
2N3253 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 264 |
2N3253S |
NPN silicon annular transistor for high-current saturated switching and core driver applications |
Motorola |
| 265 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 266 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 267 |
2N3375 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 268 |
2N3418 |
Planar transistor for switching applications |
SGS-ATES |
| 269 |
2N3419 |
Planar transistor for switching applications |
SGS-ATES |
| 270 |
2N3420 |
Planar transistor for switching applications |
SGS-ATES |
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