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Datasheets for NSISTOR DE

Datasheets found :: 605
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No. Part Name Description Manufacturer
241 2SD2146 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
242 2SD2159 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
243 2SD2182 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
244 2SD2306 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
245 2SD2309 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
246 2SD2388 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
247 2SD2450 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
248 2SD2451 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
249 2SD2452 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE ROHM
250 3135-14 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
251 3135-25 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
252 3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
253 3135-35 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
254 3135-45 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
255 3135-7 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
256 3N155 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
257 3N155A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
258 3N156 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
259 3N156A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
260 4001 Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz SGS Thomson Microelectronics
261 4003 Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz SGS Thomson Microelectronics
262 40953 156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters RCA Solid State
263 40954 156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters RCA Solid State
264 40955 156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters RCA Solid State
265 80264 NPN power RF transistor designed for Class C linear applications 1-4GHz SGS Thomson Microelectronics
266 81150M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
267 81175M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
268 81300M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
269 81390M Transistor designed for IFF avionics applicatios SGS Thomson Microelectronics
270 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics


Datasheets found :: 605
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