No. |
Part Name |
Description |
Manufacturer |
241 |
2N2219A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
242 |
2N2221 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
243 |
2N2221 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2906 PNP complementary |
Motorola |
244 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
245 |
2N2221A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
246 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
247 |
2N2222 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2907 PNP complementary |
Motorola |
248 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
249 |
2N2222A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
250 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
251 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
252 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
253 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
254 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
255 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
256 |
2N2297 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
257 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
258 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
259 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
260 |
2N2369A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
261 |
2N2369A1 |
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
262 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
263 |
2N2400 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
264 |
2N2401 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
265 |
2N2402 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
266 |
2N2484CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
267 |
2N2487 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
268 |
2N2488 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
269 |
2N2489 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
270 |
2N2537 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
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