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Datasheets for ORGA

Datasheets found :: 278
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No. Part Name Description Manufacturer
241 SF76E ORGANIC THERMAL SENSITIVE PELLET TYPE 10 AMPERES RATED CURRENT NEC
242 SF91E ORGANIC THERMAL SENSITIVE PELLET TYPE 10 AMPERES RATED CURRENT NEC
243 SF96E ORGANIC THERMAL SENSITIVE PELLET TYPE 10 AMPERES RATED CURRENT NEC
244 SF9XE ORGANIC THERMAL SENSITIVE PELLET TYPE 10 AMPERES RATED CURRENT NEC
245 SFF5002E MOS IC frequency divider (for electronic organ) SESCOSEM
246 SPR-2213, SPR-2214 Special Purpose, Commercial, High Power, Flameproof, Fireproof Inorganic Construction, High Power/Size Ratio, Quick Disconnect Terminals, Completely Welded Construction Vishay
247 TBA470 Gate for electronic organs ITT Semiconductors
248 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
249 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
250 TC5565AFL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
251 TC5565AFL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
252 TC5565APL 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
253 TC5565APL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
254 TC5565APL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
255 TC5565APL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
256 TDA0470-D Organ Gate - 12 Transistors replacing one mechanical contact ITT Semiconductors
257 TMM2018AP 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply TOSHIBA
258 TMM2018AP-25 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply TOSHIBA
259 TMM2018AP-35 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply TOSHIBA
260 TMM2018AP-45 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply TOSHIBA
261 TYPE 94SVP New OS-CON series as results of polymerized organic semiconductor as electrolyte, Features superior heat-proof characteristics compared with previously developed OS-CON series Vishay
262 UM3511A Melody Organ Generator UMC
263 UPD16908 DC-DC converter IC for organic EL NEC
264 UPD16908K9-9B4-A DC-DC converter IC for organic EL NEC
265 UPD45128163G5-A10-9JF 128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3V Elpida Memory
266 UPD45128163G5-A75-9JF 128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 7.5ns, 3.3V Elpida Memory
267 UPD45128163G5-A80-9JF 128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 8ns, 3.3V Elpida Memory
268 UPD45128441G5-A10-9JF 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 10ns, 3.3V Elpida Memory
269 UPD45128441G5-A75-9JF 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 7.5ns, 3.3V Elpida Memory
270 UPD45128441G5-A80-9J 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 8ns, 3.3V Elpida Memory


Datasheets found :: 278
Page: | 5 | 6 | 7 | 8 | 9 | 10 |



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