| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BD83854GWL |
Step-up and inverted Output Power Supply for TFT-LCD Displays |
ROHM |
| 242 |
BD83854GWL-E2 |
Step-up and inverted Output Power Supply for TFT-LCD Displays |
ROHM |
| 243 |
BD83854MUV |
Step-up and inverted Output Power Supply for TFT-LCD Displays |
ROHM |
| 244 |
BD83854MUV-E2 |
Step-up and inverted Output Power Supply for TFT-LCD Displays |
ROHM |
| 245 |
BXY15 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 246 |
BXY15CA |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 247 |
BXY15CA1 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 248 |
BXY15CA2 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 249 |
BXY15E |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 250 |
BXY15E1 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 251 |
BXY15E2 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
| 252 |
CA2830 |
Thin Film RF Linear Hybrid Amplifier High Gain 34.5dB, 1W Output power at 28V |
TRW |
| 253 |
CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 254 |
CGD1042H |
1 GHz, 23 dB gain high output power doubler |
NXP Semiconductors |
| 255 |
CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 256 |
CGD1044H |
1 GHz, 25 dB gain high output power doubler |
NXP Semiconductors |
| 257 |
CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 258 |
CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 259 |
CGD982HCI |
1 GHz, 22 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 260 |
CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 261 |
CGD987HCI |
1 GHz, 27 dB gain GaAs high output power doubler |
NXP Semiconductors |
| 262 |
CGY0918 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
Siemens |
| 263 |
CGY184 |
GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
Siemens |
| 264 |
CGY96 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 265 |
D2805D |
10W Total Output Power 28 Vin +/-5 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
| 266 |
D2812D |
10W Total Output Power 28 Vin +/-12 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
| 267 |
D2815D |
10W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
| 268 |
D5001R803R3P |
10W Total Output Power 50 Vin +1.8, +3.3 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
| 269 |
D5001R803R3PA |
10W Total Output Power 50 Vin +1.8, +3.3 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
| 270 |
E-TDA7375AV |
Dual SE or dual BTL output power amplifier with stand-by input and clip detection |
ST Microelectronics |
| | | |
