| No. |
Part Name |
Description |
Manufacturer |
| 241 |
HER208G |
24 HIGH EFFICIENCY GPP DIODES |
Leshan Radio Company |
| 242 |
HER301G |
50 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 243 |
HER302G |
100 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 244 |
HER303G |
200 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 245 |
HER304G |
300 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 246 |
HER305G |
400 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 247 |
HER306G |
600 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 248 |
HER307G |
800 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 249 |
HER308G |
1000 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 250 |
ID100 |
Monolithic Dual, Low Leakage Pico-Amp Diodes |
Linear Systems |
| 251 |
ID101 |
Dual, Low Leakage Pico-Amp Diodes |
Linear Systems |
| 252 |
IR2153D |
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package with bootstrap diode |
International Rectifier |
| 253 |
IR2153DPBF |
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package with bootstrap diode |
International Rectifier |
| 254 |
IR2153DS |
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-lead SOIC package with bootstrap diode |
International Rectifier |
| 255 |
IR2153DSPBF |
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-lead SOIC package with bootstrap diode |
International Rectifier |
| 256 |
IR2520D |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin Dip package. |
International Rectifier |
| 257 |
IR2520DPBF |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor OCP and an Integrated Bootstrap Diode |
International Rectifier |
| 258 |
IR2520DS |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin SOIC package. |
International Rectifier |
| 259 |
IR2520DSPBF |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor OCP and an Integrated Bootstrap Diode |
International Rectifier |
| 260 |
IR2520S |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin SOIC package. |
International Rectifier |
| 261 |
IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 262 |
IRS2330DJTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 263 |
IRS2330DSTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 264 |
IRS2332D |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 265 |
IRS2332DSTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 266 |
JPAD10 |
Low Leakage Pico Amp Diodes |
Calogic |
| 267 |
JPAD10 |
Single, Low Leakage Pico-Amp Diodes |
Linear Systems |
| 268 |
JPAD100 |
Low Leakage Pico Amp Diodes |
Calogic |
| 269 |
JPAD100 |
Single, Low Leakage Pico-Amp Diodes |
Linear Systems |
| 270 |
JPAD20 |
Low Leakage Pico Amp Diodes |
Calogic |
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