No. |
Part Name |
Description |
Manufacturer |
241 |
ASM3P2872AF-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
242 |
ASM3P2879AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
243 |
ASM3P2879AF-08SR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
244 |
ASM3P2879AF-08ST |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
245 |
ASM3P2879AF-08TR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
246 |
ASM3P2879AF-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
247 |
BCP28 |
Darlington Transistors - PNP Silicon Darlington Transistor for general AF applications |
Infineon |
248 |
BCP28 |
PNP Silicon Darlington Transistor |
Infineon |
249 |
BCP28 |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) |
Siemens |
250 |
BCP28E6327 |
PNP Silicon Darlington Transistor |
Infineon |
251 |
BDP280 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
252 |
BDP281 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
253 |
BDP282 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
254 |
BDP283 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
255 |
BDP284 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
256 |
BDP285 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
257 |
BDP286 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
258 |
BFP280 |
NPN Silicon RF Transistor for low noi... |
Infineon |
259 |
BFP280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
260 |
BFP280T |
Silicon NPN Planar RF Transistor |
Vishay |
261 |
BFP280TRW |
Silicon NPN Planar RF Transistor |
Vishay |
262 |
BFP280TW |
Silicon NPN Planar RF Transistor |
Vishay |
263 |
BFP280W |
NPN Silicon RF Transistor for low noi... |
Infineon |
264 |
BFP280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
265 |
BPXP28 |
Fototranzystor |
Ultra CEMI |
266 |
BSP280 |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current) |
Siemens |
267 |
BTAP28 |
Tyrystor specjalny |
Ultra CEMI |
268 |
BZW04P28 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
269 |
BZW04P28 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
270 |
BZW06-P28B |
Diode TVS Single Uni-Dir 273V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
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