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Datasheets for P28

Datasheets found :: 848
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
No. Part Name Description Manufacturer
241 ASM3P2872AF-08TT 3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution Alliance Semiconductor
242 ASM3P2879AF-06OR 3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution Alliance Semiconductor
243 ASM3P2879AF-08SR 3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution Alliance Semiconductor
244 ASM3P2879AF-08ST 3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution Alliance Semiconductor
245 ASM3P2879AF-08TR 3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution Alliance Semiconductor
246 ASM3P2879AF-08TT 3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution Alliance Semiconductor
247 BCP28 Darlington Transistors - PNP Silicon Darlington Transistor for general AF applications Infineon
248 BCP28 PNP Silicon Darlington Transistor Infineon
249 BCP28 PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) Siemens
250 BCP28E6327 PNP Silicon Darlington Transistor Infineon
251 BDP280 Tranzystor ma�ej cz�stotliwo�ci du�ej mocy Ultra CEMI
252 BDP281 Tranzystor ma�ej cz�stotliwo�ci du�ej mocy Ultra CEMI
253 BDP282 Tranzystor ma�ej cz�stotliwo�ci du�ej mocy Ultra CEMI
254 BDP283 Tranzystor ma�ej cz�stotliwo�ci du�ej mocy Ultra CEMI
255 BDP284 Tranzystor ma�ej cz�stotliwo�ci du�ej mocy Ultra CEMI
256 BDP285 Tranzystor ma�ej cz�stotliwo�ci du�ej mocy Ultra CEMI
257 BDP286 Tranzystor ma�ej cz�stotliwo�ci du�ej mocy Ultra CEMI
258 BFP280 NPN Silicon RF Transistor for low noi... Infineon
259 BFP280 NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) Siemens
260 BFP280T Silicon NPN Planar RF Transistor Vishay
261 BFP280TRW Silicon NPN Planar RF Transistor Vishay
262 BFP280TW Silicon NPN Planar RF Transistor Vishay
263 BFP280W NPN Silicon RF Transistor for low noi... Infineon
264 BFP280W NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) Siemens
265 BPXP28 Fototranzystor Ultra CEMI
266 BSP280 IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current) Siemens
267 BTAP28 Tyrystor specjalny Ultra CEMI
268 BZW04P28 TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
269 BZW04P28 TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR General Semiconductor
270 BZW06-P28B Diode TVS Single Uni-Dir 273V 600W 2-Pin DO-15 New Jersey Semiconductor


Datasheets found :: 848
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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