| No. |
Part Name |
Description |
Manufacturer |
| 241 |
200FXG13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS) |
TOSHIBA |
| 242 |
200FXH13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS) |
TOSHIBA |
| 243 |
2530 |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 244 |
2530I |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 245 |
2530N |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 246 |
26LS31 |
QuadHighSpeedDifferentialLineDriver |
National Semiconductor |
| 247 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| 248 |
27H010 |
128K x 8 High-Speed CMOS EPROM |
Cypress |
| 249 |
28C256AJC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 250 |
28C256AJC-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 251 |
28C256AJC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 252 |
28C256AJC-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 253 |
28C256AJC-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 254 |
28C256AJC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 255 |
28C256AJC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 256 |
28C256AJC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 257 |
28C256AJI-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 258 |
28C256AJI-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 259 |
28C256AJI-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 260 |
28C256AJI-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 261 |
28C256AJI-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 262 |
28C256AJI-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 263 |
28C256AJI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 264 |
28C256AJI-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 265 |
28C256AJM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 266 |
28C256AJM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 267 |
28C256AJM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 268 |
28C256AJM-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 269 |
28C256AJM-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 270 |
28C256AJM-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| | | |
