| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BD159-D |
Plastic Medium Power NPN Silicon Transistor |
ON Semiconductor |
| 242 |
BD165 |
20.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD166 |
Continental Device India Limited |
| 243 |
BD167 |
20.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD168 |
Continental Device India Limited |
| 244 |
BD169 |
20.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Complementary BD170 |
Continental Device India Limited |
| 245 |
BD181 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 246 |
BD182 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 247 |
BD183 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 248 |
BD201 |
60.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Complementary BD202 |
Continental Device India Limited |
| 249 |
BD203 |
60.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD204 |
Continental Device India Limited |
| 250 |
BD239 |
30.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
| 251 |
BD239 |
2A Complementary silicon plastic 30W power NPN transistor 45V |
Motorola |
| 252 |
BD239A |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
| 253 |
BD239A |
2A Complementary silicon plastic 30W power NPN transistor 60V |
Motorola |
| 254 |
BD239B |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
| 255 |
BD239B |
2A Complementary silicon plastic 30W power NPN transistor 80V |
Motorola |
| 256 |
BD239C |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE. |
Continental Device India Limited |
| 257 |
BD239C |
2A Complementary silicon plastic 30W power NPN transistor 100V |
Motorola |
| 258 |
BD241 |
3A Complementary silicon plastic 40W power NPN transistor |
Motorola |
| 259 |
BD241A |
3A Complementary silicon plastic 40W power NPN transistor |
Motorola |
| 260 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 261 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 262 |
BD243 |
65.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 6.000A Ic, 30 hFE. |
Continental Device India Limited |
| 263 |
BD243 |
6A complementary silicon 65W power NPN transistor |
Motorola |
| 264 |
BD243A |
65.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 6.000A Ic, 30 hFE. |
Continental Device India Limited |
| 265 |
BD243A |
6A complementary silicon 65W power NPN transistor |
Motorola |
| 266 |
BD243B |
65.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 6.000A Ic, 30 hFE. |
Continental Device India Limited |
| 267 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 268 |
BD243C |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 6.000A Ic, 15 hFE. |
Continental Device India Limited |
| 269 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 270 |
BD245 |
10A complementary silicon 80W power NPN transistor |
Motorola |
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