| No. |
Part Name |
Description |
Manufacturer |
| 241 |
HMF06020 |
Power Optimized GaAs FET 2-14 GHz |
Harris Semiconductor |
| 242 |
HVDA1040AQDSJRQ1 |
Automotive Catalog EMC-Optimized CAN Transceiver 12-VSON -40 to 125 |
Texas Instruments |
| 243 |
HVDA540QDRQ1 |
Automotive Catalog 5-V CAN Transceiver With I/O Level Shifting and Supply Optimization 8-SOIC -40 to 125 |
Texas Instruments |
| 244 |
HVDA541QDRQ1 |
Automotive Catalog 5-V CAN Transceiver with Standby mode, I/O Level Shifting and Supply Optimization 8-SOIC -40 to 125 |
Texas Instruments |
| 245 |
HVDA542QDRQ1 |
Automotive Catalog 5-V CAN Transceiver With I/O Level Shifting and Supply Optimization 8-SOIC -40 to 125 |
Texas Instruments |
| 246 |
HVDA551-Q1 |
Automotive 5-V CAN Transceiver with I/O Level Adapting and Low-Power Mode Supply Optimization |
Texas Instruments |
| 247 |
HVDA551QDRQ1 |
Automotive 5-V CAN Transceiver with I/O Level Adapting and Low-Power Mode Supply Optimization 8-SOIC -40 to 125 |
Texas Instruments |
| 248 |
HVDA553-Q1 |
Automotive 5-V CAN Transceiver with I/O Level Adapting and Low-Power Mode Supply Optimization |
Texas Instruments |
| 249 |
HVDA553QDRQ1 |
Automotive 5-V CAN Transceiver with I/O Level Adapting and Low-Power Mode Supply Optimization 8-SOIC -40 to 125 |
Texas Instruments |
| 250 |
HW86010 |
DECT Transceiver Module: The optimum embedded wireless solution |
etc |
| 251 |
HYB18L128160BC-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 252 |
HYB18L128160BF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 253 |
HYB18L256160BC-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 254 |
HYB18L256160BF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 255 |
HYB25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 256 |
HYE18L256160BC-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 257 |
HYE18L256160BF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 258 |
HYE25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 259 |
IP2001 |
Multiphase Optimized BGA Power Block |
International Rectifier |
| 260 |
IP2001TR |
Multiphase Optimized BGA Power Block |
International Rectifier |
| 261 |
IP2002 |
Synchronous Buck Multiphase Optimized BGA Power Block. |
International Rectifier |
| 262 |
IP2002PBF |
Synchronous Buck Multiphase Optimized BGA Power Block. |
International Rectifier |
| 263 |
IP2002TR |
Synchronous Buck Multiphase Optimized BGA Power Block. |
International Rectifier |
| 264 |
IP2002TRPBF |
Synchronous Buck Multiphase Optimized BGA Power Block. |
International Rectifier |
| 265 |
IP2003 |
Fully optimized solution for high current synchronous buck multiphase applications in a LGA power block. |
International Rectifier |
| 266 |
IP2003A |
Fully optimized solution for high current synchronous buck multiphase applications in a LGA power block. |
International Rectifier |
| 267 |
IP2003APBF |
Fully optimized solution for high current synchronous buck multiphase applications in a LGA power block. |
International Rectifier |
| 268 |
IP2003ATRPBF |
Fully optimized solution for high current synchronous buck multiphase applications in a LGA power block. |
International Rectifier |
| 269 |
IP2003TRPBF |
Fully optimized solution for high current synchronous buck multiphase applications in a LGA power block. |
International Rectifier |
| 270 |
IP2004 |
Fully optimized solution for high current synchronous buck multiphase applications. |
International Rectifier |
| | | |
