| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 242 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 243 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 244 |
2N6576 |
Trans Darlington Power Transistor 60V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 245 |
2N690 |
Thyristor SCR 600V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 246 |
2N690A |
Thyristor SCR 600V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 247 |
2N7000 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 0.28A |
Siliconix |
| 248 |
2N7002 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 0.18A |
Siliconix |
| 249 |
2N7008 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 0.23A |
Siliconix |
| 250 |
2N7012 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 1.2A |
Siliconix |
| 251 |
2N7016 |
MOSPOWER P-Channel Enhancement Mode Transistor 60V 0.7A |
Siliconix |
| 252 |
2N7019 |
MOSPOWER P-Channel Enhancement Mode Transistor 60V 0.12A |
Siliconix |
| 253 |
2SC1965 |
NPN epitaxial planar RF power VHF transistor 6W 13.5V |
Mitsubishi Electric Corporation |
| 254 |
302 |
QUAD 2 INPUT BUFFER Collector 60mA capability |
Amelco Semiconductor |
| 255 |
302B |
QUAD 2 INPUT BUFFER Collector 60mA capability |
Amelco Semiconductor |
| 256 |
302C |
QUAD 2 INPUT BUFFER Collector 60mA capability |
Amelco Semiconductor |
| 257 |
30KP60 |
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 258 |
30KP60A |
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 259 |
30KP60C |
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 260 |
30KP60CA |
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 261 |
30KP64 |
Diode TVS Single Uni-Dir 64V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 262 |
30KP64A |
Diode TVS Single Uni-Dir 64V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 263 |
30KP64C |
Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 264 |
30KP64CA |
Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 265 |
30KPA60 |
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 266 |
30KPA60A |
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 267 |
30KPA60C |
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 268 |
30KPA60CA |
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 269 |
30KPA64 |
Diode TVS Single Uni-Dir 64V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 270 |
30KPA64A |
Diode TVS Single Uni-Dir 64V 30KW 2-Pin |
New Jersey Semiconductor |
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