| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 242 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
| 243 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
| 244 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
| 245 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
| 246 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
| 247 |
2N5209RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 248 |
2N5210RLRA |
Amplifier Transistor NPN |
ON Semiconductor |
| 249 |
2N5225 |
Medium power NPN silicon amplifier transistor |
ITT Semiconductors |
| 250 |
2N5252 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 251 |
2N5253 |
BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE |
SemeLAB |
| 252 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 253 |
2N5294 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 254 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 255 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 256 |
2N5296 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 257 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 258 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 259 |
2N5298 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 260 |
2N5301 |
High-power NPN silicon transistor |
Motorola |
| 261 |
2N5302 |
High-power NPN silicon transistor |
Motorola |
| 262 |
2N5302 |
High-Power NPN Silicon Transistor |
ON Semiconductor |
| 263 |
2N5302-D |
High-Power NPN Silicon Transistor |
ON Semiconductor |
| 264 |
2N5303 |
High-power NPN silicon transistor |
Motorola |
| 265 |
2N5335 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 266 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 267 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 268 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 269 |
2N5338 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 270 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
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