| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
| 242 |
BF921S |
Epitaxial planar NPN transistor, intended for use as preamplifier for surface wave TV IF filters and VHF-UHF wide band amplifier |
SGS-ATES |
| 243 |
BFP 640F |
SiGe RF-Bipolar NPN Transistors in standard SOT343 and flatlead TSFP-4 |
Infineon |
| 244 |
BFP460 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 245 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
| 246 |
BFQ88 |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 247 |
BFQ88A |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 248 |
BFR37 |
Epitaxial planar NPN transistor, very high fT and very low Cre |
SGS-ATES |
| 249 |
BFR460L3 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 250 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 251 |
BFR90B |
Epitaxial planar NPN transistor, intended for high-gain, wide band, low noise application up to 1,5GHz |
SGS-ATES |
| 252 |
BFR90H |
Epitaxial planar NPN transistor, intended for VHF-UHF wide-band application |
SGS-ATES |
| 253 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 254 |
BFR91H |
Epitaxial planar NPN transistor, designed for VHF-UHF wide-band application |
SGS-ATES |
| 255 |
BFR96 |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| 256 |
BFR96H |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| 257 |
BFS460L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 258 |
BFS466L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 259 |
BFS469L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 260 |
BFS59 |
Medium power NPN transistor |
FERRANTI |
| 261 |
BFS60 |
Medium power NPN transistor |
FERRANTI |
| 262 |
BFS61 |
Medium power NPN transistor |
FERRANTI |
| 263 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 264 |
BFW16A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 265 |
BFW17A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 266 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 267 |
BFW94 |
Epitaxial planar NPN transistor for ultra linear VHF-UHF amplifier |
SGS-ATES |
| 268 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
| 269 |
BFX89 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 270 |
BFY90 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| | | |
