| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N706 |
Silicon NPN Epitaxial Planar Switching Transistor |
IPRS Baneasa |
| 242 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 243 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 244 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 245 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 246 |
2N708 |
Silicon NPN Epitaxial Planar Switching Transistor |
IPRS Baneasa |
| 247 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 248 |
2N858 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 249 |
2N859 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 250 |
2N860 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 251 |
2N861 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 252 |
2N862 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 253 |
2N863 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 254 |
2N864 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 255 |
2N865 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 256 |
2SA1020 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, POWER SWITCHING APPLICATIONS. |
TOSHIBA |
| 257 |
2SA1213 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 258 |
2SA1241 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 259 |
2SA1296 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 260 |
2SA1297 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 261 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
| 262 |
2SA1315 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 263 |
2SA1342 |
SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING APPLICATIONS |
SANYO |
| 264 |
2SA1428 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 265 |
2SA1429 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 266 |
2SA1500 |
For power switching |
Panasonic |
| 267 |
2SA1550 |
For power switching |
Panasonic |
| 268 |
2SA1680 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 269 |
2SA1681 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 270 |
2SA1734 |
Transistor Silicon PNP Triple Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
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