| No. |
Part Name |
Description |
Manufacturer |
| 241 |
08003GOB |
Silicon Controlled Rectifier |
Microsemi |
| 242 |
08003GOC |
Silicon Controlled Rectifier |
Microsemi |
| 243 |
08003GOD |
Silicon Controlled Rectifier |
Microsemi |
| 244 |
08004GOA |
Silicon Controlled Rectifier |
Microsemi |
| 245 |
08004GOB |
Silicon Controlled Rectifier |
Microsemi |
| 246 |
08004GOC |
Silicon Controlled Rectifier |
Microsemi |
| 247 |
08004GOD |
Silicon Controlled Rectifier |
Microsemi |
| 248 |
08005GOA |
Silicon Controlled Rectifier |
Microsemi |
| 249 |
08005GOB |
Silicon Controlled Rectifier |
Microsemi |
| 250 |
08005GOC |
Silicon Controlled Rectifier |
Microsemi |
| 251 |
08005GOD |
Silicon Controlled Rectifier |
Microsemi |
| 252 |
08006GOA |
Silicon Controlled Rectifier |
Microsemi |
| 253 |
08006GOB |
Silicon Controlled Rectifier |
Microsemi |
| 254 |
08006GOC |
Silicon Controlled Rectifier |
Microsemi |
| 255 |
08006GOD |
Silicon Controlled Rectifier |
Microsemi |
| 256 |
08008GOA |
Silicon Controlled Rectifier |
Microsemi |
| 257 |
08010GOA |
Silicon Controlled Rectifier |
Microsemi |
| 258 |
08012GOA |
Silicon Controlled Rectifier |
Microsemi |
| 259 |
0R06NXZ31 |
Rectifier diode |
TOSHIBA |
| 260 |
0R06NXZ31 |
Silicon diffused junction high-voltage rectifier 10kV |
TOSHIBA |
| 261 |
0R06YXZ31 |
Rectifier diode |
TOSHIBA |
| 262 |
0R06YXZ31 |
Silicon diffused junction high-voltage rectifier 20kV |
TOSHIBA |
| 263 |
0R1NYZ41 |
Silicon diffused junction high-voltage rectifier 100kV |
TOSHIBA |
| 264 |
0R1QYZ41 |
Silicon diffused junction high-voltage rectifier 125kV |
TOSHIBA |
| 265 |
0R1TYZ41 |
Silicon diffused junction high-voltage rectifier 150kV |
TOSHIBA |
| 266 |
0R6JXZ33 |
Rectifier diode |
TOSHIBA |
| 267 |
0R6JXZ33 |
Silicon diffused junction high-voltage rectifier 6kV |
TOSHIBA |
| 268 |
0R6LXZ33 |
Rectifier diode |
TOSHIBA |
| 269 |
0R6LXZ33 |
Silicon diffused junction high-voltage rectifier 8kV |
TOSHIBA |
| 270 |
0R6QXZ33 |
Rectifier diode |
TOSHIBA |
| | | |
