No. |
Part Name |
Description |
Manufacturer |
241 |
SF76E |
ORGANIC THERMAL SENSITIVE PELLET TYPE 10 AMPERES RATED CURRENT |
NEC |
242 |
SF91E |
ORGANIC THERMAL SENSITIVE PELLET TYPE 10 AMPERES RATED CURRENT |
NEC |
243 |
SF96E |
ORGANIC THERMAL SENSITIVE PELLET TYPE 10 AMPERES RATED CURRENT |
NEC |
244 |
SF9XE |
ORGANIC THERMAL SENSITIVE PELLET TYPE 10 AMPERES RATED CURRENT |
NEC |
245 |
SFF5002E |
MOS IC frequency divider (for electronic organ) |
SESCOSEM |
246 |
SPR-2213, SPR-2214 |
Special Purpose, Commercial, High Power, Flameproof, Fireproof Inorganic Construction, High Power/Size Ratio, Quick Disconnect Terminals, Completely Welded Construction |
Vishay |
247 |
TBA470 |
Gate for electronic organs |
ITT Semiconductors |
248 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
249 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
250 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
251 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
252 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
253 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
254 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
255 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
256 |
TDA0470-D |
Organ Gate - 12 Transistors replacing one mechanical contact |
ITT Semiconductors |
257 |
TMM2018AP |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
258 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
259 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
260 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
261 |
TYPE 94SVP |
New OS-CON series as results of polymerized organic semiconductor as electrolyte, Features superior heat-proof characteristics compared with previously developed OS-CON series |
Vishay |
262 |
UM3511A |
Melody Organ Generator |
UMC |
263 |
UPD16908 |
DC-DC converter IC for organic EL |
NEC |
264 |
UPD16908K9-9B4-A |
DC-DC converter IC for organic EL |
NEC |
265 |
UPD45128163G5-A10-9JF |
128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3V |
Elpida Memory |
266 |
UPD45128163G5-A75-9JF |
128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 7.5ns, 3.3V |
Elpida Memory |
267 |
UPD45128163G5-A80-9JF |
128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 8ns, 3.3V |
Elpida Memory |
268 |
UPD45128441G5-A10-9JF |
128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 10ns, 3.3V |
Elpida Memory |
269 |
UPD45128441G5-A75-9JF |
128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 7.5ns, 3.3V |
Elpida Memory |
270 |
UPD45128441G5-A80-9J |
128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 8ns, 3.3V |
Elpida Memory |
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