DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for RIC

Datasheets found :: 46779
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
No. Part Name Description Manufacturer
241 2N6124 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. General Electric Solid State
242 2N6125 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
243 2N6126 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
244 2N6211 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
245 2N6212 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
246 2N6213 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
247 2N6214 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
248 2N6246 Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. General Electric Solid State
249 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
250 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State
251 2N6249 300V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
252 2N6250 375V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
253 2N6251 450V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
254 2N6253 High-power silicon N-P-N transistor. 55V, 115W. General Electric Solid State
255 2N6254 High-power silicon N-P-N transistor. 100V, 150W. General Electric Solid State
256 2N6259 High voltage, high power transistor. 170V, 250W. General Electric Solid State
257 2N6262 High voltage silicon N-P-N transistor. 170V, 150W. General Electric Solid State
258 2N6263 Medium power silicon N-P-N transistor. 140V, 20W. General Electric Solid State
259 2N6264 Medium power silicon N-P-N transistor. 170V, 50W. General Electric Solid State
260 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
261 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
262 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
263 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
264 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
265 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
266 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
267 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
268 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
269 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
270 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State


Datasheets found :: 46779
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



© 2024 - www Datasheet Catalog com