No. |
Part Name |
Description |
Manufacturer |
241 |
2N4375 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
242 |
2N4376 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
243 |
2N4377 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
244 |
2N4378 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
245 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
246 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
247 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
248 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
249 |
2N4987 |
Silicon unilateral switch (SUS) in package TO-92 |
Planeta |
250 |
2N4988 |
Silicon unilateral switch (SUS) in package TO-92 |
Planeta |
251 |
2N4988 |
Silicon unilateral switch (SUS) in package TO-92 |
Planeta |
252 |
2N4990 |
Silicon unilateral switch (SUS) in package TO-92 |
Planeta |
253 |
2N4991 |
Silicon bilateral switch (SBS) in package TO-92 |
Planeta |
254 |
2N4992 |
Silicon bilateral switch (SBS) in package TO-92 |
Planeta |
255 |
2N4993 |
Silicon bilateral switch (SBS) in package TO-92 |
Planeta |
256 |
2N6660 |
N-Channel 60-V (D-S) Single and Quad MOSFETs |
Vishay |
257 |
2N6661 |
N-Channel 80-V and 90-V (D-S) MOSFETS |
Vishay |
258 |
2N7002K |
N-Channel 60-V (D-S) MOSFET |
Vishay |
259 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
260 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
261 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
262 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Nexperia |
263 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
264 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Philips |
265 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
266 |
2SA1013 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
267 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
268 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
269 |
2SA1020 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, POWER SWITCHING APPLICATIONS. |
TOSHIBA |
270 |
2SA1048 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
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