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Datasheets for SA10

Datasheets found :: 771
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
No. Part Name Description Manufacturer
241 2SA1082 Silicon PNP Transistor Hitachi Semiconductor
242 2SA1083 Silicon PNP Transistor Hitachi Semiconductor
243 2SA1083 Silicon PNP Epitaxial Hitachi Semiconductor
244 2SA1083 Transistors>Amplifiers/Bipolar Renesas
245 2SA1084 Silicon PNP Epitaxial Hitachi Semiconductor
246 2SA1084 Silicon PNP Transistor Hitachi Semiconductor
247 2SA1084 Transistors>Amplifiers/Bipolar Renesas
248 2SA1085 Silicon PNP Transistor Hitachi Semiconductor
249 2SA1085 Silicon PNP Epitaxial Hitachi Semiconductor
250 2SA1085 Transistors>Amplifiers/Bipolar Renesas
251 2SA1091 Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications TOSHIBA
252 2SA1093 Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1 New Jersey Semiconductor
253 2SA1093 Silicon PNP Power Transistors TO-3P(I) package Savantic
254 2SA1093 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TOSHIBA
255 2SA1094 Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1 New Jersey Semiconductor
256 2SA1094 Silicon PNP Power Transistors MT-200 package Savantic
257 2SA1094 Silicon PNP epitaxial transistor, for power amplifier applications TOSHIBA
258 2SA1094 SILICON PNP EPITAXIAL TRANSISTOR Unknow
259 2SA1095 Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1 New Jersey Semiconductor
260 2SA1095 Silicon PNP Power Transistors MT-200 package Savantic
261 2SA1095 Silicon PNP Epitaxial Type (PCT Process) TOSHIBA
262 2SA1096 Trans GP BJT PNP 50V 2A 3-Pin TO-126B-A1 New Jersey Semiconductor
263 2SA1096 Power Device - Power Transistors - Others Panasonic
264 2SA1096 Silicon PNP Power Transistors TO-126 package Savantic
265 2SA1096A Power Device - Power Transistors - Others Panasonic
266 2SA1096A Silicon PNP Power Transistors TO-126 package Savantic
267 2SC2564 Silicon NPN epitaxial power transistor, complementary to 2SA1094 TOSHIBA
268 2SC2565 Silicon NPN epitaxial power transistor, complementary to 2SA1095 TOSHIBA
269 CSA1012 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Continental Device India Limited
270 CSA1012Y 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 30 hFE. Continental Device India Limited


Datasheets found :: 771
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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