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Datasheets for SE TRANSIST

Datasheets found :: 3040
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No. Part Name Description Manufacturer
241 2N5783 Silicon P-N-P epitaxial-base transistor. -45V, 10W. General Electric Solid State
242 2N5784 Silicon N-P-N epitaxial-base transistor. 80V, 10W. General Electric Solid State
243 2N5785 Silicon N-P-N epitaxial-base transistor. 65V, 10W. General Electric Solid State
244 2N5786 Silicon N-P-N epitaxial-base transistor. 45V, 10W. General Electric Solid State
245 2N5871 PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
246 2N5871/1 PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
247 2N5871/2 PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
248 2N5872 PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
249 2N5872A PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
250 2N5872B PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
251 2N5873 NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
252 2N5873/1 NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
253 2N5873/2 NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
254 2N5874 NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
255 2N5874A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
256 2N5874B NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
257 2N5875 Epitaxial-base transistor for linear and switching applications SGS-ATES
258 2N5876 Epitaxial-base transistor for linear and switching applications SGS-ATES
259 2N5877 Epitaxial-base transistor for linear and switching applications SGS-ATES
260 2N5878 Epitaxial-base transistor for linear and switching applications SGS-ATES
261 2N5916 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
262 2N5917 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
263 2N6121 Epitaxial-base transistor for linear and switching applications SGS-ATES
264 2N6122 Epitaxial-base transistor for linear and switching applications SGS-ATES
265 2N6123 Epitaxial-base transistor for linear and switching applications SGS-ATES
266 2N6124 Epitaxial-base transistor for linear and switching applications SGS-ATES
267 2N6125 Epitaxial-base transistor for linear and switching applications SGS-ATES
268 2N6126 Epitaxial-base transistor for linear and switching applications SGS-ATES
269 2N6338A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
270 2N6339A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa


Datasheets found :: 3040
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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