No. |
Part Name |
Description |
Manufacturer |
241 |
2N5496 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
242 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
243 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
244 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
245 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
246 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
247 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
248 |
2N5864 |
PNP silicon general-purpose transistor |
Motorola |
249 |
2N5865 |
PNP silicon general-purpose transistor |
Motorola |
250 |
2N5871 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
251 |
2N5871/1 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
252 |
2N5871/2 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
253 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
254 |
2N5872A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
255 |
2N5872B |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
256 |
2N5873 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
257 |
2N5873/1 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
258 |
2N5873/2 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
259 |
2N5874 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
260 |
2N5874A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
261 |
2N5874B |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
262 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
263 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
264 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
265 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
266 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
267 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
268 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
269 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
270 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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