| No. |
Part Name |
Description |
Manufacturer |
| 241 |
IP4001SL-TF |
5-CH MOTOR DRIVEIC |
etc |
| 242 |
KM416V4004BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 243 |
KM416V4004BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 244 |
KM416V4004BSL-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 245 |
KM416V4104BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 246 |
KM416V4104BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 247 |
KM416V4104BSL-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 248 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 249 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 250 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 251 |
KM44C4000CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 252 |
KM44C4000CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 253 |
KM44C4003CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 254 |
KM44C4003CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 255 |
KM44C4005CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 256 |
KM44C4005CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 257 |
KM44C4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 258 |
KM44C4100CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 259 |
KM44C4103CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 260 |
KM44C4103CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 261 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 262 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 263 |
KM44C4104ASL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 264 |
KM44C4104ASL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 265 |
KM44C4105CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 266 |
KM44C4105CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 267 |
KM44V4000CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 268 |
KM44V4000CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 269 |
KM44V4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 270 |
KM44V4100CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
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