No. |
Part Name |
Description |
Manufacturer |
241 |
M470T6554CZ3-CE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
242 |
M470T6554CZ3-CLCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
243 |
M470T6554CZ3-CLCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
244 |
M470T6554CZ3-CLD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
245 |
M470T6554CZ3-CLD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
246 |
M470T6554CZ3-CLE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
247 |
M470T6554CZ3-CLE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
248 |
M470T6554CZ3-CLE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
249 |
M470T6554CZ3-CLE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
250 |
M485L1624FT0 |
DDR SDRAM SODIMM |
Samsung Electronic |
251 |
M485L1624FT0-CA2 |
DDR SDRAM SODIMM |
Samsung Electronic |
252 |
M485L1624FT0-CB0 |
DDR SDRAM SODIMM |
Samsung Electronic |
253 |
M485L1624FT0-CB3 |
DDR SDRAM SODIMM |
Samsung Electronic |
254 |
M485L1624FU0-CA2 |
DDR SDRAM SODIMM |
Samsung Electronic |
255 |
M485L1624FU0-CB0 |
DDR SDRAM SODIMM |
Samsung Electronic |
256 |
M485L1624FU0-CB3 |
DDR SDRAM SODIMM |
Samsung Electronic |
257 |
NT128S64VH4A0GM0-75B |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
258 |
NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
259 |
NT128S64VH4A0GM0-8B |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
260 |
NT128S64VH8C0GM-75B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
261 |
NT128S64VH8C0GM-7K |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
262 |
NT128S64VH8C0GM-8B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
263 |
P13B16212A |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
264 |
P13B16212V |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
265 |
PC133 |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
266 |
V43644Y04VCTG-10PC |
3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
Mosel Vitelic Corp |
267 |
V43644Y04VCTG-75 |
3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM |
Mosel Vitelic Corp |
268 |
V43644YO4VCTG-10PC |
3.3V 4M x 64 high performance 100MHz SDRAM unbuffered SODIMM |
Mosel Vitelic Corp |
269 |
V43644YO4VCTG-75 |
3.3V 4M x 64 high performance PC133 unbuffered SODIMM |
Mosel Vitelic Corp |
270 |
V43644YO4VTG-10PC |
3.3V 4M x 64 high performance 100MHz SDRAM unbuffered SODIMM |
Mosel Vitelic Corp |
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