| No. |
Part Name |
Description |
Manufacturer |
| 241 |
5962D9960703QUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 242 |
5962D9960703QXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 243 |
5962D9960703QXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 244 |
5962D9960703QXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 245 |
5962D9960703TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 246 |
5962D9960703TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 247 |
5962D9960703TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 248 |
5962D9960703TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 249 |
5962D9960703TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 250 |
5962D9960703TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 251 |
5962D9960704QUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 252 |
5962D9960704QUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 253 |
5962D9960704QUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 254 |
5962D9960704QXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 255 |
5962D9960704QXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 256 |
5962D9960704QXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 257 |
5962D9960704TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 258 |
5962D9960704TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 259 |
5962D9960704TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 260 |
5962D9960704TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 261 |
5962D9960704TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 262 |
5962D9960704TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 263 |
5962F1120101QXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 264 |
5962F1120101VXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 265 |
5962F1120102QXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 266 |
5962F1120102VXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 267 |
5962F1120201QXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 268 |
5962F1120202QXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 269 |
5962F9684501QXA |
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 270 |
5962F9684501QXC |
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
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