| No. |
Part Name |
Description |
Manufacturer |
| 241 |
AN1181 |
MCUS - ELECTROSTATIC DISCHARGE SENSITIVITY MEASUREMENT |
SGS Thomson Microelectronics |
| 242 |
APPLICATION-NOTE |
Transistors with excelent in Electrostatic-Discharge-Resistant (ESDR) |
NEC |
| 243 |
AT91RM9200 |
The AT91RM9200 features a 200 MIPS ARM920T processor with 16K-byte instruction and 16K-byte data cache memories, 16K bytes of SRAM, 128K bytes of ROM, External Bus Interface featuring SDRAM, Burst Flash and Static Memory Controllers, USB D |
Atmel |
| 244 |
AV131-315 |
HIP3™ Variable Attenuator for AMPS and GSM Base Stations |
Skyworks Solutions |
| 245 |
AV132-315 |
HIP3 Variable Attenuator for DCS and PCS Base Stations |
Alpha Industries Inc |
| 246 |
AV132-315 |
HIP3™ Variable Attenuator for DCS and PCS Base Stations |
Skyworks Solutions |
| 247 |
AV133-315 |
HIP3 Variable Attenuator for UMTS Base Stations |
Alpha Industries Inc |
| 248 |
AV133-315 |
HIP3™ Variable Attenuator for UMTS Base Stations |
Skyworks Solutions |
| 249 |
AV9169AM-70 |
Frequency generator for Workstation system |
Integrated Circuit Systems |
| 250 |
BA726 |
βA726 Termostatic Transistors Array |
IPRS Baneasa |
| 251 |
BLF0810-180 |
Base station LDMOS transistors |
Philips |
| 252 |
BLF0810-90 |
Base station LDMOS transistors |
Philips |
| 253 |
BLF900-110 |
Base station LDMOS transistors |
Philips |
| 254 |
BLF900S-110 |
Base station LDMOS transistors |
Philips |
| 255 |
BLV80/28 |
VHF Power NPN silicon planar epitaxial transistor intended for use in base stations in the VHF mobile radio band |
Philips |
| 256 |
BS616LV1011 |
Asynchronous 1M(64Kx16) bits Static RAM |
Brilliance Semiconductor |
| 257 |
BS616LV1012 |
Asynchronous 1M(64Kx16) bits Static RAM |
Brilliance Semiconductor |
| 258 |
BS616LV1013 |
Asynchronous 1M(64Kx16) bits Static RAM |
Brilliance Semiconductor |
| 259 |
BS616LV1015 |
Asynchronous 1M(64Kx16) bits Static RAM |
Brilliance Semiconductor |
| 260 |
BS616LV1016 |
Asynchronous 1M(64Kx16) bits Static RAM |
Brilliance Semiconductor |
| 261 |
BS616LV1611 |
Asynchronous 16M(1Mx16) bits Static RAM |
Brilliance Semiconductor |
| 262 |
BS616LV1613 |
Asynchronous 16M(1Mx16) bits Static RAM |
Brilliance Semiconductor |
| 263 |
BS616LV1615 |
Asynchronous 16M(1Mx16) bits Static RAM |
Brilliance Semiconductor |
| 264 |
BS616LV1622 |
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM |
Brilliance Semiconductor |
| 265 |
BS616LV1623 |
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM |
Brilliance Semiconductor |
| 266 |
BS616LV1626 |
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM |
Brilliance Semiconductor |
| 267 |
BS616LV2016 |
Asynchronous 2M(128Kx16) bits Static RAM |
Brilliance Semiconductor |
| 268 |
BS616LV2017 |
Asynchronous 2M(128Kx16) bits Static RAM |
Brilliance Semiconductor |
| 269 |
BS616LV2019 |
Asynchronous 2M(128Kx16) bits Static RAM |
Brilliance Semiconductor |
| 270 |
BS616LV4016 |
Asynchronous 4M(256Kx16) bits Static RAM |
Brilliance Semiconductor |
| | | |
