| No. |
Part Name |
Description |
Manufacturer |
| 241 |
IR2520D |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin Dip package. |
International Rectifier |
| 242 |
IR2520DPBF |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor OCP and an Integrated Bootstrap Diode |
International Rectifier |
| 243 |
IR2520DS |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin SOIC package. |
International Rectifier |
| 244 |
IR2520DSPBF |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor OCP and an Integrated Bootstrap Diode |
International Rectifier |
| 245 |
IR2520S |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin SOIC package. |
International Rectifier |
| 246 |
IRAC1150-D2 |
Control Board is designed to demonstrate the performance of the IR1150S control IC in a continuous conduction mode boost converter for PFC. |
International Rectifier |
| 247 |
IRF82 |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 248 |
IRF822FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 249 |
IRF82FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 250 |
IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 251 |
IRS2330DJTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 252 |
IRS2330DSTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 253 |
IRS2332D |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 254 |
IRS2332DSTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 255 |
ISL6801 |
High Side Driver, N-Channel MOSFET, Bootstrap Supply |
Intersil |
| 256 |
ISL6801AB |
High Side Driver, N-Channel MOSFET, Bootstrap Supply |
Intersil |
| 257 |
ISL6801AB-T |
High Voltage Bootstrap High Side Driver |
Intersil |
| 258 |
JZ48F3000L0YBQ0 |
1.8V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 259 |
JZ48F3000L0YTQ0 |
1.8V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 260 |
JZ48F3000L0ZBQ0 |
3.0V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 261 |
JZ48F3000L0ZTQ0 |
3.0V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 262 |
JZ48F4000L0YBQ0 |
1.8V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 263 |
JZ48F4000L0YTQ0 |
1.8V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 264 |
JZ48F4000L0ZBQ0 |
3.0V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 265 |
JZ48F4000L0ZTQ0 |
3.0V, 256-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 266 |
KT922 |
Silizium-HF-Leistungstransistor in Epitaxie-Planar-Technologie |
etc |
| 267 |
KT922A |
Silizium-HF-Leistungstransistor in Epitaxie-Planar-Technologie |
etc |
| 268 |
KT922B |
Silizium-HF-Leistungstransistor in Epitaxie-Planar-Technologie |
etc |
| 269 |
L-53CGCK |
The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode |
Kingbright Electronic |
| 270 |
L6384E |
HV high and low side driver with embedded bootstrap diode |
ST Microelectronics |
| | | |
