No. |
Part Name |
Description |
Manufacturer |
241 |
2SA656 |
Industrial Transistor Specification Table |
TOSHIBA |
242 |
2SA657 |
Industrial Transistor Specification Table |
TOSHIBA |
243 |
2SA658 |
Industrial Transistor Specification Table |
TOSHIBA |
244 |
2SB502 |
Industrial Transistor Specification Table |
TOSHIBA |
245 |
2SB503 |
Industrial Transistor Specification Table |
TOSHIBA |
246 |
2SC1001 |
Industrial Transistor Specification Table |
TOSHIBA |
247 |
2SC105 |
Industrial Transistor Specification Table |
TOSHIBA |
248 |
2SC1077 |
Industrial Transistor Specification Table |
TOSHIBA |
249 |
2SC108A |
Industrial Transistor Specification Table |
TOSHIBA |
250 |
2SC109A |
Industrial Transistor Specification Table |
TOSHIBA |
251 |
2SC1120 |
Industrial Transistor Specification Table |
TOSHIBA |
252 |
2SC1121 |
Industrial Transistor Specification Table |
TOSHIBA |
253 |
2SC1122 |
Industrial Transistor Specification Table |
TOSHIBA |
254 |
2SC1165 |
Industrial Transistor Specification Table |
TOSHIBA |
255 |
2SC1193 |
Industrial Transistor Specification Table |
TOSHIBA |
256 |
2SC1200 |
Industrial Transistor Specification Table |
TOSHIBA |
257 |
2SC1236 |
Industrial Transistor Specification Table |
TOSHIBA |
258 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
259 |
2SC199 |
Industrial Transistor Specification Table |
TOSHIBA |
260 |
2SC2750 |
High Speed High Current Switching Industrial Use |
Unknow |
261 |
2SC3218-M |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE |
NEC |
262 |
2SC366G |
Industrial Transistor Specification Table |
TOSHIBA |
263 |
2SC367G |
Industrial Transistor Specification Table |
TOSHIBA |
264 |
2SC368 |
Industrial Transistor Specification Table |
TOSHIBA |
265 |
2SC369G |
Industrial Transistor Specification Table |
TOSHIBA |
266 |
2SC371G |
Industrial Transistor Specification Table |
TOSHIBA |
267 |
2SC372G |
Industrial Transistor Specification Table |
TOSHIBA |
268 |
2SC373G |
Industrial Transistor Specification Table |
TOSHIBA |
269 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
270 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
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