| No. |
Part Name |
Description |
Manufacturer |
| 241 |
NTE5987 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 40A. |
NTE Electronics |
| 242 |
NTE5988 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. |
NTE Electronics |
| 243 |
NTE5989 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. |
NTE Electronics |
| 244 |
NTE5990 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. |
NTE Electronics |
| 245 |
NTE5991 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. |
NTE Electronics |
| 246 |
NTE5992 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 40A. |
NTE Electronics |
| 247 |
NTE5993 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 40A. |
NTE Electronics |
| 248 |
NTE5994 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 40A. |
NTE Electronics |
| 249 |
NTE5995 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 40A. |
NTE Electronics |
| 250 |
NTE5998 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 251 |
NTE5999 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 252 |
NTE6002 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. |
NTE Electronics |
| 253 |
NTE6003 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. |
NTE Electronics |
| 254 |
NTE6004 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. |
NTE Electronics |
| 255 |
NTE6007 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A. |
NTE Electronics |
| 256 |
NTE6008 |
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. |
NTE Electronics |
| 257 |
NTE6009 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. |
NTE Electronics |
| 258 |
NTE6010 |
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 600V. Average rectified forward current 40A. |
NTE Electronics |
| 259 |
NTMFS5834NL |
Power MOSFET 40V, 75A, 9.3mOhm Single N-Channel SO8-FL |
ON Semiconductor |
| 260 |
NTR0202PL |
Power MOSFET 400 mA 20 V P-Channel SOT-23 |
ON Semiconductor |
| 261 |
NTR0202PLT1 |
Power MOSFET 400 mA 20 V P-Channel SOT-23 |
ON Semiconductor |
| 262 |
NTR0202PLT1G |
Power MOSFET 400 mA 20 V P-Channel SOT-23 |
ON Semiconductor |
| 263 |
NTR0202PLT3 |
Power MOSFET 400 mA 20 V P-Channel SOT-23 |
ON Semiconductor |
| 264 |
NTR0202PLT3G |
Power MOSFET 400 mA 20 V P-Channel SOT-23 |
ON Semiconductor |
| 265 |
NVMFD5852NL |
Power MOSFET 40V 44A 6.9 mOhm Dual N-Channel SO-8FL Logic Level |
ON Semiconductor |
| 266 |
NVMFD5853N |
Power MOSFET 40 V, 10 mOhm, 53 A, Dual N−Channel SO-8FL |
ON Semiconductor |
| 267 |
NVMFD5853NL |
Power MOSFET 40V 34A 10 mOhm Dual N-Channel SO-8FL Logic Level |
ON Semiconductor |
| 268 |
NVMFS5830NL |
Power MOSFET 40V 185A 2.3 mOhm Single N-Channel SO-8FL Logic Level |
ON Semiconductor |
| 269 |
NVMFS5832NL |
Power MOSFET 40 V, 4.2 mOhm, 120 A, Single N-Channel SO-8FL |
ON Semiconductor |
| 270 |
PDI1394P23 |
2-port/1-port 400 Mbps physical layer interface |
Philips |
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