| No. |
Part Name |
Description |
Manufacturer |
| 241 |
FTL75939 |
Configurable Load Switch and Reset Timer |
Fairchild Semiconductor |
| 242 |
G525A |
USB High-Side Power Switch Advance Information |
Global Mixed-mode Technology |
| 243 |
G525A1 |
USB High-Side Power Switch Advance Information |
Global Mixed-mode Technology |
| 244 |
G525A2 |
USB High-Side Power Switch Advance Information |
Global Mixed-mode Technology |
| 245 |
G528 |
USB High-Side Power Switch Advance Information |
Global Mixed-mode Technology |
| 246 |
G528A |
USB High-Side Power Switch Advance Information |
Global Mixed-mode Technology |
| 247 |
G528AP1U |
USB High-Side Power Switch Advance Information |
Global Mixed-mode Technology |
| 248 |
G528AP1UF |
USB High-Side Power Switch Advance Information |
Global Mixed-mode Technology |
| 249 |
G528P1U |
USB High-Side Power Switch Advance Information |
Global Mixed-mode Technology |
| 250 |
G528P1UF |
USB High-Side Power Switch Advance Information |
Global Mixed-mode Technology |
| 251 |
GD125 |
Germanium PNP power transistor for 48V switch application and low frequency power amplifier |
RFT |
| 252 |
GD175 |
Germanium PNP power transistor for 48V switch applications for low-frequency power amplifiers |
RFT |
| 253 |
GD180 |
Germanium PNP power transistor for 60V switch application |
RFT |
| 254 |
GD241 |
Germanium PNP power transistor for amplifier output stages and as pairs for push-pull stages in the low frequency range as well as switch applications upt to 35V |
RFT |
| 255 |
HN1J02FU |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 256 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 257 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 258 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 259 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 260 |
HN1L02FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 261 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 262 |
HN4K03JU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 263 |
HN7G01FU |
Multi Chip Discrete Device Power Management Switch Application Driver Circuit Application Interface Circuit Application |
TOSHIBA |
| 264 |
HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. |
TOSHIBA |
| 265 |
JAN-2N1118 |
SPAT® PNP silicon transistor switch and amplifiers, military version |
Sprague |
| 266 |
JAN-2N1119 |
SPAT® PNP silicon transistor switch and amplifiers, military version |
Sprague |
| 267 |
JDP2S01AFS |
DIODE Silicon Epitaxial PIN Type UHF~VHF Band RF Switch Applications |
TOSHIBA |
| 268 |
JDS2S03S |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 269 |
KSC5305 |
High Voltage High Speed Power Switch Application |
Fairchild Semiconductor |
| 270 |
KTJ6131E |
SMOS FET/ Analog Switch Application |
Korea Electronics (KEC) |
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