| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1N3296 |
Diode Switching 1.2KV 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 242 |
1N3296A |
Diode Switching 1.2KV 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 243 |
1N3297 |
Diode Switching 1.4KV 100A 2-Pin DO-8 |
New Jersey Semiconductor |
| 244 |
1N3297A |
Diode Switching 1.4KV 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 245 |
1N34 |
Diode Switching 175V 0.5A 2-Pin DO-35 |
New Jersey Semiconductor |
| 246 |
1N3491 |
Diode Switching 50V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 247 |
1N3492 |
Diode Switching 100V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 248 |
1N3493 |
Diode Switching 200V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 249 |
1N3494 |
Diode Switching 300V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 250 |
1N3495 |
Diode Switching 400V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 251 |
1N3496 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 252 |
1N3497 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 253 |
1N3498 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 254 |
1N3499 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 255 |
1N3569 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 256 |
1N3570 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 257 |
1N3571 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 258 |
1N3572 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 259 |
1N3573 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 260 |
1N3574 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 261 |
1N3595 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 262 |
1N3595 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 263 |
1N3595-1 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 264 |
1N360 |
Diode Switching 50V 0.2A 2-Pin DO-35 Tape and Box |
New Jersey Semiconductor |
| 265 |
1N3600 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 266 |
1N3600 |
SWITCHING DIODES |
Compensated Devices Incorporated |
| 267 |
1N3600 |
Silicon signal diode - high current switching |
SESCOSEM |
| 268 |
1N3600UR |
SWITCHING DIODE |
Compensated Devices Incorporated |
| 269 |
1N3604 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 270 |
1N3604 |
Silicon planar switching diodes in a glass package |
Siemens |
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