No. |
Part Name |
Description |
Manufacturer |
241 |
HYB514400BTL-70 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
242 |
KM416C1000BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
243 |
KM416C1200BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
244 |
KM416C254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
245 |
KM416V1000BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
246 |
KM416V1200BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
247 |
KM416V254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
248 |
KM44C1000DTL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
249 |
KM44V1000DTL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
250 |
TC551001BFTL-70L |
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
251 |
TC55257DFTL-70L |
32,768 WORD-8 BIT STATIC RAM |
TOSHIBA |
252 |
TC554001FTL-70 |
524,288 WORDS x 8BIT STATIC RAM |
TOSHIBA |
253 |
TC554001FTL-70L |
524,288 WORDS x 8BIT STATIC RAM |
TOSHIBA |
254 |
TC554001FTL-70V |
524, 288 words x 8 bit static RAM, access time 70ns |
TOSHIBA |
255 |
TC554161FTL-70 |
262, 144-word by 16 bit static RAM, access time 70ns |
TOSHIBA |
256 |
TC554161FTL-70L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
257 |
TC554161FTL-70V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
258 |
VG36641641DTL-7 |
CMOS Synchronous Dynamic RAM |
etc |
259 |
VG36641641DTL-7L |
CMOS Synchronous Dynamic RAM |
etc |
260 |
VG36644041DTL-7 |
CMOS Synchronous Dynamic RAM |
etc |
261 |
VG36644041DTL-7L |
CMOS Synchronous Dynamic RAM |
etc |
262 |
VG36648041DTL-7 |
CMOS Synchronous Dynamic RAM |
etc |
263 |
VG36648041DTL-7L |
CMOS Synchronous Dynamic RAM |
etc |
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