| No. |
Part Name |
Description |
Manufacturer |
| 241 |
DF1 |
Germanium junction photodiode |
IPRS Baneasa |
| 242 |
DF2 |
Germanium photodiode |
IPRS Baneasa |
| 243 |
DF2 |
Ge PHOTODIODE |
IPRS Baneasa |
| 244 |
DF2 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 245 |
DF3 |
Germanium photodiode |
IPRS Baneasa |
| 246 |
DF3 |
Ge PHOTODIODE |
IPRS Baneasa |
| 247 |
DF3 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 248 |
FG2 |
Fotodioda |
Ultra CEMI |
| 249 |
FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode |
Fujitsu Microelectronics |
| 250 |
G1115 |
GaAsP photodiode |
Hamamatsu Corporation |
| 251 |
G1116 |
GaAsP photodiode |
Hamamatsu Corporation |
| 252 |
G1117 |
GaAsP photodiode |
Hamamatsu Corporation |
| 253 |
G1118 |
GaAsP photodiode |
Hamamatsu Corporation |
| 254 |
G1120 |
GaAsP photodiode |
Hamamatsu Corporation |
| 255 |
G1126-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 256 |
G1127-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 257 |
G1735 |
GaAsP photodiode |
Hamamatsu Corporation |
| 258 |
G1736 |
GaAsP photodiode |
Hamamatsu Corporation |
| 259 |
G1737 |
GaAsP photodiode |
Hamamatsu Corporation |
| 260 |
G1738 |
GaAsP photodiode |
Hamamatsu Corporation |
| 261 |
G1740 |
GaAsP photodiode |
Hamamatsu Corporation |
| 262 |
G1746 |
GaAsP photodiode |
Hamamatsu Corporation |
| 263 |
G1747 |
GaAsP photodiode |
Hamamatsu Corporation |
| 264 |
G1961 |
GaP photodiode |
Hamamatsu Corporation |
| 265 |
G1962 |
GaP photodiode |
Hamamatsu Corporation |
| 266 |
G1963 |
GaP photodiode |
Hamamatsu Corporation |
| 267 |
G2119 |
GaAsP photodiode |
Hamamatsu Corporation |
| 268 |
G2711-01 |
GaAsP photodiode |
Hamamatsu Corporation |
| 269 |
G3067 |
GaAsP photodiode |
Hamamatsu Corporation |
| 270 |
G3297 |
GaAsP photodiode |
Hamamatsu Corporation |
| | | |
