No. |
Part Name |
Description |
Manufacturer |
241 |
25CTQ035 |
35V 30A Schottky Common Cathode Diode in a TO-220AB package |
International Rectifier |
242 |
25CTQ035-1 |
35V 30A Schottky Common Cathode Diode in a TO-262 package |
International Rectifier |
243 |
25CTQ035S |
35V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
244 |
25CTQ035STRL |
35V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
245 |
25CTQ035STRR |
35V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
246 |
25CTQ040 |
40V 30A Schottky Common Cathode Diode in a TO-220AB package |
International Rectifier |
247 |
25CTQ040-1 |
40V 30A Schottky Common Cathode Diode in a TO-262 package |
International Rectifier |
248 |
25CTQ040S |
40V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
249 |
25CTQ045 |
45V 30A Schottky Common Cathode Diode in a TO-220AB package |
International Rectifier |
250 |
25CTQ045-1 |
45V 30A Schottky Common Cathode Diode in a TO-262 package |
International Rectifier |
251 |
25CTQ045S |
45V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
252 |
25CTQ045STRL |
45V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
253 |
25CTQ045STRR |
45V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
254 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
255 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
256 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
257 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
258 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
259 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
260 |
2SA52 |
Germanium PNP alloy junction transistor, AM Frequency Converter Applications |
TOSHIBA |
261 |
2SC184 |
Transistors AM FREQUENCY CONVERTER IF AMPLIFIER |
USHA India LTD |
262 |
2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
263 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
264 |
2SC2731 |
UHF TV TUNER FREQUENCY CONVERTER, LOCAL OSCILLATOR AND WIDE BAND AMPLIFIER |
Hitachi Semiconductor |
265 |
2SC394 |
Silicon NPN planar transistor, high frequency amplifier, FM frequency converter applications |
TOSHIBA |
266 |
2SC454 |
Silicon NPN Epitaxial LTP Transistor, intended for use in MW Frequency Converter, 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
267 |
2SC460 |
Silicon NPN Planar Transistor, intended for use in AM RF Amplifier, Frequency Converter, FM IF Amplifier |
Hitachi Semiconductor |
268 |
2SC461 |
Silicon NPN Planar Transistor, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
269 |
2SC535 |
Silicon NPN Epitaxial Planar Transistor, intended for use in FM RF Amplifier, Frequency Converter, Local Oscillator |
Hitachi Semiconductor |
270 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| | | |