| No. |
Part Name |
Description |
Manufacturer |
| 241 |
AUIR3330S |
Automotive Q101 Protected High Frequency High Side Switch in a 7-Lead D2-Pak Package |
International Rectifier |
| 242 |
AUIR3330STRL |
Automotive Q101 Protected High Frequency High Side Switch in a 7-Lead D2-Pak Package |
International Rectifier |
| 243 |
AUIR3330STRR |
Automotive Q101 Protected High Frequency High Side Switch in a 7-Lead D2-Pak Package |
International Rectifier |
| 244 |
BAY89 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
| 245 |
BAY90 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
| 246 |
BAY91 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
| 247 |
BB669 |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) |
Siemens |
| 248 |
BB689 |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance) |
Siemens |
| 249 |
BBY55-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 250 |
BBY55-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 251 |
BBY56-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 252 |
BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 253 |
BBY57-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) |
Siemens |
| 254 |
BBY57-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 255 |
BBY58-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 256 |
BBY58-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 257 |
BFR37 |
Epitaxial planar NPN transistor, very high fT and very low Cre |
SGS-ATES |
| 258 |
BFW92 |
NPN high-frequency transistor, low noise over a wide current range, very high power gain and good intermodulation |
Philips |
| 259 |
BY268 |
0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER |
Diodes |
| 260 |
BY269 |
0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER |
Diodes |
| 261 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 262 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 263 |
CFY77-10 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 264 |
CHA2095A |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 265 |
CHA2095A99F/00 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 266 |
CHA2395 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 267 |
CHA2395-99F/00 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 268 |
CLC5654 |
Very High Speed, Low Cost, Quad Operational Amplifier |
National Semiconductor |
| 269 |
CMPTA42NPN |
SILICON COMPLEMENTARY HIGH VOLTAGE TRANSISTOR |
Central Semiconductor |
| 270 |
CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR |
Central Semiconductor |
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