| No. |
Part Name |
Description |
Manufacturer |
| 241 |
AP2128K-3.3TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 242 |
AP2128K-3.9TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 243 |
AP2128K-4.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 244 |
AP2128K-4.75TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 245 |
AP2128K-5.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 246 |
AP2128K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 247 |
AP2129 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 248 |
AP2129K-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 249 |
AP2129K-1.2TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 250 |
AP2129K-3.3TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 251 |
AP2129K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 252 |
APPLICATION-NOTE |
Optimum method of use of low frequency low noise transistors |
NEC |
| 253 |
APPLICATION-NOTE |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A |
NEC |
| 254 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 255 |
BFT66 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 256 |
BFT67 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 257 |
BGU7060 |
Analog high linearity low noise variable gain amplifier |
NXP Semiconductors |
| 258 |
BGU7061 |
Analog high linearity low noise variable gain amplifier |
NXP Semiconductors |
| 259 |
BGU7062 |
Analog high linearity low noise variable gain amplifier |
NXP Semiconductors |
| 260 |
BGU7062N2 |
Analog high linearity low noise variable gain amplifier |
NXP Semiconductors |
| 261 |
BGU7063 |
Analog controlled high linearity low noise variable gain amplifier |
NXP Semiconductors |
| 262 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 263 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 264 |
CFY77-10 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 265 |
CHA2391 |
36-40GHz Very Low Noise Amplifier |
United Monolithic Semiconductors |
| 266 |
CHA2391-99F/00 |
36-40GHz Very Low Noise Amplifier |
United Monolithic Semiconductors |
| 267 |
CHA2394 |
36-40GHz Very Low Noise High Gain Amplifier |
United Monolithic Semiconductors |
| 268 |
CHA2394-99F/00 |
36-40GHz Very Low Noise High Gain Amplifier |
United Monolithic Semiconductors |
| 269 |
D1555 |
Very Low Noise / Low Cost Voltage Controlled Oscillator |
Z communications |
| 270 |
EL2227C |
Dual Very Low Noise Amplifier |
Elantec Semiconductor |
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