| No. |
Part Name |
Description |
Manufacturer |
| 2431 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 2432 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
| 2433 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
| 2434 |
K4R271669B-NCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
| 2435 |
K4R271869B-MCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
| 2436 |
K4R271869B-NCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
| 2437 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 2438 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 2439 |
K6040 |
40A 600V Silicon Rectifier Diode |
IPRS Baneasa |
| 2440 |
K6040-S |
40A 600 Rectifier Diode |
IPRS Baneasa |
| 2441 |
K6040-SR |
40A 600 Rectifier Diode |
IPRS Baneasa |
| 2442 |
K6040R |
40A 600V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 2443 |
KBL06 |
Diode Rectifier Bridge Single 600V 4A 4-Pin Case KBL Bulk |
New Jersey Semiconductor |
| 2444 |
KBP06 |
Diode Rectifier Bridge Single 600V 2A 4-Pin(4+Tab) Case KBP |
New Jersey Semiconductor |
| 2445 |
KBP06M |
Diode Rectifier Bridge Single 600V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 2446 |
KBPC1006 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 600 V. |
Comchip Technology |
| 2447 |
KBPC1006S |
10A, 600V ultra fast recovery rectifier |
MCC |
| 2448 |
KBPC1506 |
15 A high current bridge rectifier. Max reccurent peak reverse voltage 600 V. |
Comchip Technology |
| 2449 |
KBPC1506 |
Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V |
Wing Shing Computer Components |
| 2450 |
KBPC1506 |
Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V |
Wing Shing Computer Components |
| 2451 |
KBPC1506W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
| 2452 |
KBPC2506 |
25 A high current bridge rectifier. Max reccurent peak reverse voltage 600 V. |
Comchip Technology |
| 2453 |
KBPC2506GS |
25A, 600V ultra fast recovery rectifier |
MCC |
| 2454 |
KBPC2506S |
25A, 600V ultra fast recovery rectifier |
MCC |
| 2455 |
KBPC2506W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
| 2456 |
KBPC3506 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 600 V. |
Comchip Technology |
| 2457 |
KBPC3506 |
Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 600V. Maximum RMS bridge input voltage 420V. Maximum DC blocking voltage 600V |
Wing Shing Computer Components |
| 2458 |
KBPC3506 |
Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 600V. Maximum RMS bridge input voltage 420V. Maximum DC blocking voltage 600V |
Wing Shing Computer Components |
| 2459 |
KBPC3506S |
35A, 600V ultra fast recovery rectifier |
MCC |
| 2460 |
KBPC3506W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
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