No. |
Part Name |
Description |
Manufacturer |
2431 |
HP4-L-DC110V |
HP-relay. 10 Amp power relay. 4 form C, neon lamp. Coil voltage 110 V DC. Standard plug-in terminal type (without lamp wired). |
Matsushita Electric Works(Nais) |
2432 |
HSP9501 |
Data Buffer, Programmable, 32MHz, Data Word to 10-Bits |
Intersil |
2433 |
HY51V17403HGJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
2434 |
HY51V17403HGJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
2435 |
HY51V17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
2436 |
HY51V17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
2437 |
HY51V17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
2438 |
HY51V17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
2439 |
HY51V17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
2440 |
HY51V17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
2441 |
HY51V17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
2442 |
HY51V17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
2443 |
HY51V17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
2444 |
HY51V17403HGT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
2445 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
2446 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
2447 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
2448 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
2449 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
2450 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
2451 |
HY51VS17403HGJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
2452 |
HY51VS17403HGJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
2453 |
HY51VS17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
2454 |
HY51VS17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
2455 |
HY51VS17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
2456 |
HY51VS17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
2457 |
HY51VS17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
2458 |
HY51VS17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
2459 |
HY51VS17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
2460 |
HY51VS17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
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