| No. |
Part Name |
Description |
Manufacturer |
| 2431 |
RM20C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2432 |
RM20C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2433 |
RM20CA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2434 |
RM20CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2435 |
RM20CA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2436 |
RM20CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2437 |
RM20DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2438 |
RM20DA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2439 |
RM20DA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2440 |
RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2441 |
RM20DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 2442 |
RM20DA/CA/C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 2443 |
RM20HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2444 |
RM20TA-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2445 |
RM20TA-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2446 |
RM20TN-H |
Rectifier Diode Modules for ASIPM |
Mitsubishi Electric Corporation |
| 2447 |
RM20TN-H |
Mitsubishi Three-Phase Diode Bridge Modules |
Mitsubishi Electric Corporation |
| 2448 |
RM20TPM-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2449 |
RM20TPM-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2450 |
RM20TPM-24 |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
| 2451 |
RM20TPM-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2452 |
RM20TPM-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2453 |
RM20TPM-2H |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
| 2454 |
RM20TPM-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 2455 |
RM20TPM-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2456 |
RM20TPM-H |
Three-Phase Diode Bridge Modules (40 Amperes/800 Volts) |
Powerex Power Semiconductors |
| 2457 |
RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2458 |
RM20TPM-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2459 |
RMM2080 |
2-18 GHz Variable Gain Driver Amplifier |
Fairchild Semiconductor |
| 2460 |
RMM2080 |
2-18 GHz Wideband variable-gain driver amplifier |
Raytheon |
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