| No. |
Part Name |
Description |
Manufacturer |
| 2431 |
1S6100R |
Silicon power zener diode 100V, reverse polarity |
Texas Instruments |
| 2432 |
1S6110 |
Silicon power zener diode 110V |
Texas Instruments |
| 2433 |
1S6110A |
Silicon power zener diode 110V, ±5% tolerance |
Texas Instruments |
| 2434 |
1S6110R |
Silicon power zener diode 110V, reverse polarity |
Texas Instruments |
| 2435 |
1S6120 |
Silicon power zener diode 120V |
Texas Instruments |
| 2436 |
1S6120A |
Silicon power zener diode 120V, ±5% tolerance |
Texas Instruments |
| 2437 |
1S6120R |
Silicon power zener diode 120V, reverse polarity |
Texas Instruments |
| 2438 |
1S6130 |
Silicon power zener diode 130V |
Texas Instruments |
| 2439 |
1S6130A |
Silicon power zener diode 130V, ±5% tolerance |
Texas Instruments |
| 2440 |
1S6130R |
Silicon power zener diode 130V, reverse polarity |
Texas Instruments |
| 2441 |
1S6150 |
Silicon power zener diode 150V |
Texas Instruments |
| 2442 |
1S6150A |
Silicon power zener diode 150V, ±5% tolerance |
Texas Instruments |
| 2443 |
1S6150R |
Silicon power zener diode 150V, reverse polarity |
Texas Instruments |
| 2444 |
1S6160 |
Silicon power zener diode 160V |
Texas Instruments |
| 2445 |
1S6160A |
Silicon power zener diode 160V, ±5% tolerance |
Texas Instruments |
| 2446 |
1S6160R |
Silicon power zener diode 160V, reverse polarity |
Texas Instruments |
| 2447 |
1S6180 |
Silicon power zener diode 180V |
Texas Instruments |
| 2448 |
1S6180A |
Silicon power zener diode 180V, ±5% tolerance |
Texas Instruments |
| 2449 |
1S6180R |
Silicon power zener diode 180V, reverse polarity |
Texas Instruments |
| 2450 |
1S6200 |
Silicon power zener diode 200V |
Texas Instruments |
| 2451 |
1S6200A |
Silicon power zener diode 200V, ±5% tolerance |
Texas Instruments |
| 2452 |
1S6200R |
Silicon power zener diode 200V, reverse polarity |
Texas Instruments |
| 2453 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2454 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2455 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2456 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2457 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2458 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2459 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 2460 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
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