| No. |
Part Name |
Description |
Manufacturer |
| 2461 |
FDS8936S |
Dual N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2462 |
FDS8947A |
Dual P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2463 |
FDS9412 |
Single N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2464 |
FDS9412_NL |
Single N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2465 |
FDS9936 |
Dual N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2466 |
FDS9936A |
Dual N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2467 |
FDT457N |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2468 |
FDT457N_NL |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2469 |
FDT459N |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2470 |
FDT459N_NL |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2471 |
FQU6N50C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology |
Fairchild Semiconductor |
| 2472 |
G115 |
Monolithic 6-Channel Enhancement-Type MOS FET Switch |
Siliconix |
| 2473 |
G116 |
Monolithic 5-Channel Enhancement-Type MOS FET Switch |
Siliconix |
| 2474 |
G117 |
Monolithic 5-Channel Enhancement-Type MOS FET Switch |
Siliconix |
| 2475 |
G118 |
Monolithic 6-Channel Enhancement-Type MOS FET Switch |
Siliconix |
| 2476 |
G119 |
Monolithic 6-Channel Enhancement-Type MOS FET Switch |
Siliconix |
| 2477 |
G122 |
Monolithic 4-Channel Enhancement-Type MOS FET Switch |
Siliconix |
| 2478 |
G123 |
Monolithic 4-Channel Enhancement-Type MOS FET Switch |
Siliconix |
| 2479 |
GFB50N03 |
N-Channel Enhancement-Mode MOSFET |
General Semiconductor |
| 2480 |
GFB70N03 |
N-Channel Enhancement-Mode MOSFET |
General Semiconductor |
| 2481 |
GFP70N03 |
N-Channel Enhancement-Mode MOSFET |
General Semiconductor |
| 2482 |
H2N7000 |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
Hi-Sincerity Microelectronics |
| 2483 |
HCT7000M |
N-channel enhancement mode MOS transistor |
Optek Technology |
| 2484 |
HCT7000MTX |
N-channel enhancement mode MOS transistor |
Optek Technology |
| 2485 |
HCT7000MTXV |
N-channel enhancement mode MOS transistor |
Optek Technology |
| 2486 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
| 2487 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
| 2488 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
| 2489 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
| 2490 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
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