| No. |
Part Name |
Description |
Manufacturer |
| 2461 |
2SC2756R |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
| 2462 |
2SC2757 |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
| 2463 |
2SC2757R |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
| 2464 |
2SC2759R |
NPN silicon epitaxial transistor for UHF/VHF mixer, UHF oscillator |
NEC |
| 2465 |
2SC2776 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 2466 |
2SC2780 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 2467 |
2SC2782 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2468 |
2SC2797 |
NPN epitaxial planar RF power UHF transistor 5W 24V |
Mitsubishi Electric Corporation |
| 2469 |
2SC2798 |
NPN epitaxial planar RF power UHF transistor 12W 24V |
Mitsubishi Electric Corporation |
| 2470 |
2SC2799 |
NPN epitaxial planar RF power UHF transistor 25W 24V |
Mitsubishi Electric Corporation |
| 2471 |
2SC2800 |
NPN SPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2472 |
2SC2805 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2473 |
2SC2806 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2474 |
2SC280H |
Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier |
Hitachi Semiconductor |
| 2475 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 2476 |
2SC2814 |
NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier Applications |
SANYO |
| 2477 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 2478 |
2SC2824 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 2479 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 2480 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 2481 |
2SC2839 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 2482 |
2SC283H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier |
Hitachi Semiconductor |
| 2483 |
2SC2840 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 2484 |
2SC2845 |
SILICON NPN EPITAXIAL PLANAR |
Panasonic |
| 2485 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 2486 |
2SC2853 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2487 |
2SC2854 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2488 |
2SC2855 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2489 |
2SC2856 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2490 |
2SC2859 |
Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
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