| No. |
Part Name |
Description |
Manufacturer |
| 2491 |
2SC2909 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications |
SANYO |
| 2492 |
2SC2910 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver Applications |
SANYO |
| 2493 |
2SC2911 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 2494 |
2SC2922 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 2495 |
2SC2932 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2496 |
2SC2933 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2497 |
2SC2946 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 2498 |
2SC29461 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 2499 |
2SC2954 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 2500 |
2SC2960 |
NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications |
SANYO |
| 2501 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 2502 |
2SC2983 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 2503 |
2SC2986 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 2504 |
2SC2987 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| 2505 |
2SC2987A |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| 2506 |
2SC2995 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications |
TOSHIBA |
| 2507 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
| 2508 |
2SC2999 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 2509 |
2SC3000 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 2510 |
2SC3001 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2511 |
2SC3007 |
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
| 2512 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 2513 |
2SC3012 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| 2514 |
2SC3012 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| 2515 |
2SC3017 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2516 |
2SC3018 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2517 |
2SC3019 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2518 |
2SC3020 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2519 |
2SC3021 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2520 |
2SC3022 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
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