| No. |
Part Name |
Description |
Manufacturer |
| 2491 |
VFC110AP |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2492 |
VFC110APG4 |
High Frequency Voltage-to-Frequency Converter 14-PDIP |
Texas Instruments |
| 2493 |
VFC110BG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2494 |
VFC110BG1 |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2495 |
VFC110SG |
High Frequency Voltage-to-Frequency Converter |
Texas Instruments |
| 2496 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2497 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2498 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2499 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2500 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2501 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2502 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2503 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2504 |
W523AXXX |
HIGH FIDELITY POWER SPEECH |
Winbond Electronics |
| 2505 |
W5830 |
HIGH FIDELITY Power Speech |
Winbond Electronics |
| 2506 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2507 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2508 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2509 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2510 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2511 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2512 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2513 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 2514 |
X2N4416 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 2515 |
X2N5484 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 2516 |
X2N5485 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 2517 |
X2N5486 |
25 V, N-Channel JFET high frequency amplifier |
Calogic |
| 2518 |
X2N5912 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 2519 |
XP06531 |
For high frequency amplification, oscillation, and mixing |
Panasonic |
| 2520 |
XU308 |
N-Channel JFET High Frequency Amplifier |
Calogic |
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