| No. |
Part Name |
Description |
Manufacturer |
| 2491 |
FSYE430R3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 2492 |
FSYE430R4 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 2493 |
FSYE913A0D |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2494 |
FSYE913A0D1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2495 |
FSYE913A0D3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2496 |
FSYE913A0R |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2497 |
FSYE913A0R1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2498 |
FSYE913A0R3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2499 |
FSYE913A0R4 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2500 |
FSYE923A0D |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2501 |
FSYE923A0D1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2502 |
FSYE923A0D3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2503 |
FSYE923A0R |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2504 |
FSYE923A0R1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2505 |
FSYE923A0R3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2506 |
FSYE923A0R4 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 2507 |
FT1551 |
Silicon High Speed Power NPN Transistor |
Fujitsu Microelectronics |
| 2508 |
FT2551 |
Silicon High Speed Power PNP Transistor |
Fujitsu Microelectronics |
| 2509 |
GH2801R5S |
50W Total Output Power 28 Vin +1.5 Vout Single DC-DC Radiation Hardened Converter in a GH Package. |
International Rectifier |
| 2510 |
GH2801R8S |
50W Total Output Power 28 Vin +1.8 Vout Single DC-DC Radiation Hardened Converter in a GH Package. |
International Rectifier |
| 2511 |
GH2801S |
50W Total Output Power 28 Vin +1.0 Vout Single DC-DC Radiation Hardened Converter in a GH Package. |
International Rectifier |
| 2512 |
GH2802R5S |
50W Total Output Power 28 Vin +2.5 Vout Single DC-DC Radiation Hardened Converter in a GH Package. |
International Rectifier |
| 2513 |
GH2803R3S |
50W Total Output Power 28 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a GH Package. DLA Number 5962-1021701 |
International Rectifier |
| 2514 |
GH2805S |
50W Total Output Power 28 Vin +5 Vout Single DC-DC Radiation Hardened Converter in a GH Package. DLA Number 5962-1021901 |
International Rectifier |
| 2515 |
GT100A/10 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 2516 |
GT100A/4 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 2517 |
GT100A/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 2518 |
GT100A/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 2519 |
GT100A/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 2520 |
GT100B/10 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
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