| No. |
Part Name |
Description |
Manufacturer |
| 2491 |
ENA1799 |
Bipolar Transistor, -50V, -10A, Low VCE(sat) PNP TO-220F-3FS |
ON Semiconductor |
| 2492 |
ENA1800 |
Bipolar Transistor, 50V, 10A, Low VCE(sat) NPN TO-220F-3FS |
ON Semiconductor |
| 2493 |
ENA1837 |
Bipolar Transistor, 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML |
ON Semiconductor |
| 2494 |
ENA1910 |
RF Transistor, 12V, 100mA, fT=10GHz, NPN Single CPH6 |
ON Semiconductor |
| 2495 |
ENA1925 |
RF Transistor, 12V, 30mA, fT=8GHz, NPN Single MCPH3 |
ON Semiconductor |
| 2496 |
ENN7483 |
Bipolar Transistor, -12V, -1A, Low VCE(sat) PNP Single MCPH3 |
ON Semiconductor |
| 2497 |
ENN7508 |
Bipolar Transistor, 15V, 0.6A, Low VCE(sat) NPN Single SSFP |
ON Semiconductor |
| 2498 |
ENN8223 |
Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat) Complementary Dual CPH5 |
ON Semiconductor |
| 2499 |
ESM191 |
NPN silicon power transistor, deflection and commutation |
SESCOSEM |
| 2500 |
ESM25 |
FET dual transistor, N channel |
SESCOSEM |
| 2501 |
ESM25A |
FET dual transistor, N channel |
SESCOSEM |
| 2502 |
ESM282 |
NPN silicon transistor, RF amplification |
SESCOSEM |
| 2503 |
F606 |
PNP epitaxial silicon transistor, high-current switching application |
SANYO |
| 2504 |
FH102A |
RF Transistor, 10V, 70mA, fT=7GHz NPN Dual MCP6 |
ON Semiconductor |
| 2505 |
FH2164 |
RF MOSFET Power Transistor, 8W, 12V 30 - 90 MHz |
Tyco Electronics |
| 2506 |
GCN53 |
Germanium NPN transistor, low-frequency |
Tesla Elektronicke |
| 2507 |
GCN54 |
Germanium NPN transistor, low-frequency |
Tesla Elektronicke |
| 2508 |
GCN55 |
Germanium PNP transistor, low-frequency, low speed switching applications |
Tesla Elektronicke |
| 2509 |
GCN55 |
Germanium PNP transistor, low-frequency |
Tesla Elektronicke |
| 2510 |
GCN56 |
Germanium PNP transistor, low-frequency, low speed switching applications |
Tesla Elektronicke |
| 2511 |
GCN56 |
Germanium PNP transistor, low-frequency |
Tesla Elektronicke |
| 2512 |
GF145 |
Germanium PNP MESA Transistor, mixing and oscillator stages up to 860MHz |
RFT |
| 2513 |
GF147 |
Germanium PNP MESA Transistor, for pre-mixing and oscillator stages up to 900MHz, collector isolated from the case |
RFT |
| 2514 |
HN3C06F |
Silicon NPN epitaxial planar type transistor, marking WE |
TOSHIBA |
| 2515 |
HN3C07F |
Silicon NPN epitaxial planar type transistor, marking WF |
TOSHIBA |
| 2516 |
HN3C08F |
Silicon NPN epitaxial planar type transistor, marking WG |
TOSHIBA |
| 2517 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
| 2518 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
| 2519 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
| 2520 |
J2N2221 |
Silicon NPN transistor, general purpose (chips) |
SESCOSEM |
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