| No. |
Part Name |
Description |
Manufacturer |
| 2521 |
MKP3V120 |
SIDACs 1 AMPERE RMS 100 thru 135 VOLTS |
Motorola |
| 2522 |
MKP3V130 |
SIDACs 1 AMPERE RMS 100 thru 135 VOLTS |
Motorola |
| 2523 |
ML1000605D |
5W Total Output Power 100 Vin +/-15 Vout Dual DC-DC Radiation Hardened Converter in a ML Package. |
International Rectifier |
| 2524 |
MMBC1622D8 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2525 |
MMBC1623L6 |
50 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2526 |
MMBD4148 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 2527 |
MMBD914 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 2528 |
MMBV2101LT1-D |
Silicon Tuning Diodes 6.8 - 100 pF, 30 Volts Voltage Variable Capacitance Diodes |
ON Semiconductor |
| 2529 |
MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS |
Motorola |
| 2530 |
MMFT1N10E |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS |
Motorola |
| 2531 |
MP1942 |
3/4 inche photoncounting module. Window material quartz. Dark counts per second 100 cps. |
PerkinElmer Optoelectronics |
| 2532 |
MP1943 |
3/4 inche photoncounting module. Window material UV glass. Dark counts per second 100 cps. |
PerkinElmer Optoelectronics |
| 2533 |
MP963 |
1/3 inche photoncounting module. Window material UV glass. Dark counts per second 100 cps. |
PerkinElmer Optoelectronics |
| 2534 |
MPS5172 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 100 - 500 hFE |
Continental Device India Limited |
| 2535 |
MPS5172 |
25 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2536 |
MPS6513 |
30 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2537 |
MPS6517 |
40 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 2538 |
MPS6520 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2539 |
MPS6521 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2540 |
MPS6522 |
25 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 2541 |
MPS6523 |
25 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 2542 |
MPS8098 |
0.625W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 0.500A Ic, 100 - 300 hFE |
Continental Device India Limited |
| 2543 |
MPS8099 |
0.625W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.500A Ic, 100 - 300 hFE |
Continental Device India Limited |
| 2544 |
MPS8598 |
0.625W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 0.500A Ic, 100 - 300 hFE |
Continental Device India Limited |
| 2545 |
MPS8599 |
0.625W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.500A Ic, 100 - 300 hFE |
Continental Device India Limited |
| 2546 |
MPX2100 |
MPX2100 100 kPa On-Chip Temperature Compensated and Calibrated Silicon Pressure Sensors |
Motorola |
| 2547 |
MPX2100A |
0 to 100 kPa (0 to 14.5 psi) 40 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
| 2548 |
MPX2100AP |
0 to 100 kPa (0 to 14.5 psi) 40 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
| 2549 |
MPX2100AS |
0 to 100 kPa (0 to 14.5 psi) 40 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
| 2550 |
MPX2100ASX |
0 to 100 kPa (0 to 14.5 psi) 40 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
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