| No. |
Part Name |
Description |
Manufacturer |
| 2521 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2522 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2523 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2524 |
31DF2 |
3 Amp. Glass Passivated Ultrafast Recovery Rectifier |
Fagor |
| 2525 |
31DF4 |
3 Amp. Glass Passivated Ultrafast Recovery Rectifier |
Fagor |
| 2526 |
3EZ100 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 2527 |
3EZ100 |
100 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2528 |
3EZ100 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2529 |
3EZ11 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 2530 |
3EZ11 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2531 |
3EZ110 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 2532 |
3EZ110 |
110 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2533 |
3EZ110 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2534 |
3EZ12 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 2535 |
3EZ12 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2536 |
3EZ120 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 2537 |
3EZ120 |
120 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2538 |
3EZ120 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2539 |
3EZ13 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2540 |
3EZ130 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 2541 |
3EZ130 |
130 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2542 |
3EZ130 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2543 |
3EZ14 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 2544 |
3EZ14 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2545 |
3EZ140 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 2546 |
3EZ140 |
140 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 2547 |
3EZ140 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2548 |
3EZ15 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 2549 |
3EZ15 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 2550 |
3EZ150 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
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