| No. |
Part Name |
Description |
Manufacturer |
| 2521 |
PTN78000WAZT |
1.5-A, Wide-Input Adjustable Switching Regulator 5-Surface Mount Module -40 to 85 |
Texas Instruments |
| 2522 |
PTVA101K02EV-V1 |
High Power RF LDMOS FET 1000W, 50V, 1030 / 1090 MHz |
Wolfspeed |
| 2523 |
RKBPC1000W |
10,15,25,35A FAST RECOVERY BRIDGE RECTIFIER |
Won-Top Electronics |
| 2524 |
SE1000W |
LightChargerTM155 Mb/s Transimpedance Amplifier Final |
SiGe Semiconductor |
| 2525 |
SJE1349 |
65.000W Switching NPN Plastic Leaded Transistor. 63V Vceo, 6.000A Ic, 43 hFE. |
Continental Device India Limited |
| 2526 |
SMDJ100 |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2527 |
SMDJ100A |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2528 |
SMDJ110 |
110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2529 |
SMDJ110A |
110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2530 |
SMDJ120 |
120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2531 |
SMDJ120A |
120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2532 |
SMDJ130 |
130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2533 |
SMDJ130A |
130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2534 |
SMDJ150 |
150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2535 |
SMDJ150A |
150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2536 |
SMDJ160 |
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2537 |
SMDJ160A |
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2538 |
SMDJ170 |
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2539 |
SMDJ170A |
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2540 |
SMLJ100 |
Ppk=3000W, Vc=179V transient voltage suppressor |
MCC |
| 2541 |
SMLJ100 |
100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2542 |
SMLJ100A |
Ppk=3000W, Vc=162V transient voltage suppressor |
MCC |
| 2543 |
SMLJ100A |
100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2544 |
SMLJ100C |
Ppk=3000W, Vc=179V transient voltage suppressor |
MCC |
| 2545 |
SMLJ100CA |
Ppk=3000W, Vc=162V transient voltage suppressor |
MCC |
| 2546 |
SMLJ110 |
Ppk=3000W, Vc=196V transient voltage suppressor |
MCC |
| 2547 |
SMLJ110 |
110.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2548 |
SMLJ110A |
Ppk=3000W, Vc=177V transient voltage suppressor |
MCC |
| 2549 |
SMLJ110A |
110.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2550 |
SMLJ110C |
Ppk=3000W, Vc=196V transient voltage suppressor |
MCC |
| | | |
